Tunneling assisted p-contact free GaN-InGaN green light-emitting diodes

Tunneling assisted p-contact free GaN-InGaN green light-emitting diodes

The effects of bottom tunnel junction (TJ) on optoelectronic characteristics of green light-emitting diodes are analyzed numerically. Our proposed LED has enhanced internal quantum efficiency (IQE), radiative recombination rate, and carrier concentration in comparison to reference conventional LED....

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Bibliographic Details
Main Authors:	Jamshad Bashir, Muhammad Usman, Shazma Ali, Laraib Mustafa
Format:	Article
Language:	English
Published:	Taylor & Francis Group 2025-01-01
Series:	Journal of Information Display
Subjects:	Tunnel junction green gap tunnel junction electric field
Online Access:	https://www.tandfonline.com/doi/10.1080/15980316.2024.2370272
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