Tunneling assisted p-contact free GaN-InGaN green light-emitting diodes
The effects of bottom tunnel junction (TJ) on optoelectronic characteristics of green light-emitting diodes are analyzed numerically. Our proposed LED has enhanced internal quantum efficiency (IQE), radiative recombination rate, and carrier concentration in comparison to reference conventional LED....
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Taylor & Francis Group
2025-01-01
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| Series: | Journal of Information Display |
| Subjects: | |
| Online Access: | https://www.tandfonline.com/doi/10.1080/15980316.2024.2370272 |
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