Investigation of the impact of the GaN cap layer on DC and RF performance in N-polar AlGaN/GaN HEMTs
In this paper, we investigated the logic and RF performance of nanostructure N-polar AlGaN/GaN high-electron mobility transistors (HEMTs) with and without GaN cap layer. It’s found that devices without the GaN cap layer exhibit superior performance, the maximum drain current density of 0.99 mA/μm at...
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| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Frontiers Media S.A.
2025-04-01
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| Series: | Frontiers in Physics |
| Subjects: | |
| Online Access: | https://www.frontiersin.org/articles/10.3389/fphy.2025.1561573/full |
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