ITZO-Based Self-Aligned Top Gate Thin-Film Transistor with Minimum Parasitic Capacitance for Long-Retention 2T0C DRAM
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
American Chemical Society
2024-12-01
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| Series: | ACS Omega |
| Online Access: | https://doi.org/10.1021/acsomega.4c08274 |
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