Strain Fluctuations Unlock Ferroelectricity in Wurtzites

Strain Fluctuations Unlock Ferroelectricity in Wurtzites

Abstract Ferroelectrics are of practical interest for non‐volatile data storage due to their reorientable, crystallographically defined polarization. Yet efforts to integrate conventional ferroelectrics into ultrathin memories have been frustrated by film‐thickness limitations, which impede polariza...

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Bibliographic Details
Main Authors: Steven M. Baksa, Simon Gelin, Seda Oturak, R. Jackson Spurling, Alireza Sepehrinezhad, Leonard Jacques, Susan E. Trolier‐McKinstry, Adri C. T. van Duin, Jon‐Paul Maria, Andrew M. Rappe, Ismaila Dabo
Format: Article
Language:English
Published: Wiley-VCH 2025-04-01
Series:Advanced Electronic Materials
Subjects:
device scaling
energy efficiency
ferroelectrics
heterostructures
Online Access:https://doi.org/10.1002/aelm.202400567
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https://doi.org/10.1002/aelm.202400567

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