Different Nucleation Mechanisms during Atomic Layer Deposition of HfS2 on Cobalt Oxide Surfaces

Different Nucleation Mechanisms during Atomic Layer Deposition of HfS2 on Cobalt Oxide Surfaces

Abstract The atomic layer deposition (ALD) of HfS2 is investigated on atomically defined CoO(100) and CoO(111) surfaces under ultrahigh‐vacuum (UHV) conditions. The ALD process is performed by sequential dosing of the precursors tetrakis(dimethylamido)hafnium (TDMAH) and deuterium sulfide (D2S) sepa...

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Bibliographic Details
Main Authors: Georg Fickenscher, Nikolai Sidorenko, Kira Mikulinskaya, Jörg Libuda
Format: Article
Language:English
Published: Wiley-VCH 2025-01-01
Series:Advanced Materials Interfaces
Subjects:
atomic layer deposition
cobalt oxide
HfS2
infrared reflection absorption spectroscopy
Lewis acid–base reaction
Online Access:https://doi.org/10.1002/admi.202400371
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https://doi.org/10.1002/admi.202400371

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