Investigating Self-Heating Effects in Ferroelectric FinFETs for Reliable In-Memory Computing
Ferroelectric (Fe) FET has emerged as a promising candidate for efficient in-memory computing due to its properties, such as non-volatility and low power. However, scaled 3D devices such as Fe-FinFET suffer from significant self-heating effects (SHE) and process variations. These issues cause incons...
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| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2025-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/10960387/ |
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