Can ferroelectric tunnel junction be a game changer as eNVM and in neuromorphic hardware?
This work highlights the advantages that ferroelectric tunnel junction (FTJ) memristors can bring to the non-volatile memory technology and in custom designed neuromorphic hardware. Advantages of FTJs not only come from the area-scalability, large on/off switching ratio, fast read and write operatio...
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2025-06-01
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| Series: | APL Machine Learning |
| Online Access: | http://dx.doi.org/10.1063/5.0252822 |
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