High Performance Enhancement-Mode AlGaN/GaN MIS-HEMT with Selective Fluorine Treatment
A novel enhancement-mode (E-mode) Metal-Insulator-Semiconductor- (MIS-) HEMT with selective fluorine ion (F−) treatment is proposed and its mechanism is investigated. The HEMT features the Selective F− treatment both in the AlGaN channel region and in the thick passivation layer between the gate and...
Saved in:
| Main Authors: | , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Wiley
2015-01-01
|
| Series: | Advances in Condensed Matter Physics |
| Online Access: | http://dx.doi.org/10.1155/2015/267680 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Be the first to leave a comment!