Partially Isolated Dual Work Function Gate IGZO TFT With Obviously Reduced Leakage Current for 3D DRAMs

Partially Isolated Dual Work Function Gate IGZO TFT With Obviously Reduced Leakage Current for 3D DRAMs

In this article, a partially isolated dual work function (PIDWF) gate In-Ga-Zn-O (IGZO) thin-film transistor (TFT) is proposed to reduce the off-state current (Ioff) obviously, which also provides a feasible integration method for stacking IGZO TFT on Si-based devices. It is found that compared with...

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Bibliographic Details
Main Authors: Yunjiao Bao, Gangping Yan, Lei Cao, Chuqiao Niu, Qingkun Li, Guanqiao Sang, Lianlian Li, Yanzhao Wei, Xuexiang Zhang, Jie Luo, Yanyu Yang, Gaobo Xu, Huaxiang Yin
Format: Article
Language:English
Published: IEEE 2024-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Dual work function gate
In-Ga-Zn-O (IGZO) thin-fifilm transistor (TFT)
isolation dielectric
off-state current (Ioff)
partially isolated
Online Access:https://ieeexplore.ieee.org/document/10557586/
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https://ieeexplore.ieee.org/document/10557586/

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