APA (7th ed.) Citation

Liu, L., Hou, Y., Zhang, W., Han, D., & Wang, Y. Ozone Treatment Improved the Resistive Switching Uniformity of HfAlO2 Based RRAM Devices. Wiley.

Chicago Style (17th ed.) Citation

Liu, Lifeng, Yi Hou, Weibing Zhang, Dedong Han, and Yi Wang. Ozone Treatment Improved the Resistive Switching Uniformity of HfAlO2 Based RRAM Devices. Wiley.

MLA (9th ed.) Citation

Liu, Lifeng, et al. Ozone Treatment Improved the Resistive Switching Uniformity of HfAlO2 Based RRAM Devices. Wiley.