Ozone Treatment Improved the Resistive Switching Uniformity of HfAlO2 Based RRAM Devices
HfAlO2 based resistive random access memory (RRAM) devices were fabricated using atomic layer deposition by modulating deposition cycles for HfO2 and Al2O3. Effect of ozone treatment on the resistive switching uniformity of HfAlO2 based RRAM devices was investigated. Compared to the as-fabricated de...
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| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2015-01-01
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| Series: | Advances in Condensed Matter Physics |
| Online Access: | http://dx.doi.org/10.1155/2015/714097 |
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