Soft Error-Tolerant and Highly Stable Low-Power SRAM for Satellite Applications
As CMOS technology has advanced, the transistor integration density of static random-access memory (SRAM) cells has increased. This has led to a reduction in the critical charge of sensitive nodes, making the SRAM cells more susceptible to soft errors. When high-energy particles in space strike the...
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| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2025-01-01
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| Series: | Applied Sciences |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2076-3417/15/1/375 |
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