Chen, R., Wang, L., Han, R., Liao, K., Shi, X., Zhang, P., & Hu, H. A Stepped Gate Oxide Structure for Suppressing Gate-Induced Drain Leakage in Fully Depleted Germanium-on-Insulator Multi-Subchannel Tunneling Field-Effect Transistors. MDPI AG.
Chicago Style (17th ed.) CitationChen, Rui, Liming Wang, Ruizhe Han, Keqin Liao, Xinlong Shi, Peijian Zhang, and Huiyong Hu. A Stepped Gate Oxide Structure for Suppressing Gate-Induced Drain Leakage in Fully Depleted Germanium-on-Insulator Multi-Subchannel Tunneling Field-Effect Transistors. MDPI AG.
MLA (9th ed.) CitationChen, Rui, et al. A Stepped Gate Oxide Structure for Suppressing Gate-Induced Drain Leakage in Fully Depleted Germanium-on-Insulator Multi-Subchannel Tunneling Field-Effect Transistors. MDPI AG.
Warning: These citations may not always be 100% accurate.