A Stepped Gate Oxide Structure for Suppressing Gate-Induced Drain Leakage in Fully Depleted Germanium-on-Insulator Multi-Subchannel Tunneling Field-Effect Transistors

A Stepped Gate Oxide Structure for Suppressing Gate-Induced Drain Leakage in Fully Depleted Germanium-on-Insulator Multi-Subchannel Tunneling Field-Effect Transistors

To address the severe gate-induced drain leakage (GIDL) issue in fully depleted germanium-on-insulator (FD-GeOI) multi-subchannel tunneling field-effect transistors (MS TFETs), this paper proposes a stepped gate oxide (SGO) structure. In the off-state, the SGO structure effectively suppresses GIDL b...

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Bibliographic Details
Main Authors: Rui Chen, Liming Wang, Ruizhe Han, Keqin Liao, Xinlong Shi, Peijian Zhang, Huiyong Hu
Format: Article
Language:English
Published: MDPI AG 2025-03-01
Series:Micromachines
Subjects:
FD-GeOI
TFET
GIDL
multi-subchannel
stepped gate oxide
Online Access:https://www.mdpi.com/2072-666X/16/4/375
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