Effect of Plasma, RF, and RIE Treatments on Properties of Double-Sided High Voltage Solar Cells with Vertically Aligned p-n Junctions
Si-based solar cells with vertically aligned p-n junctions operating at high voltage were designed and fabricated. The plasma treatments and antireflection coating deposition on the working surfaces of both single- and multijunction cells were made using the special holders. It was shown that additi...
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| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
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Wiley
2016-01-01
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| Series: | International Journal of Photoenergy |
| Online Access: | http://dx.doi.org/10.1155/2016/1815205 |
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| author | Mykola O. Semenenko Mykhailo G. Dusheiko Sergiy V. Mamykin Valeriy O. Ganus Mykhailo V. Kirichenko Roman V. Zaitsev Mykola M. Kharchenko N. I. Klyui |
| author_facet | Mykola O. Semenenko Mykhailo G. Dusheiko Sergiy V. Mamykin Valeriy O. Ganus Mykhailo V. Kirichenko Roman V. Zaitsev Mykola M. Kharchenko N. I. Klyui |
| author_sort | Mykola O. Semenenko |
| collection | DOAJ |
| description | Si-based solar cells with vertically aligned p-n junctions operating at high voltage were designed and fabricated. The plasma treatments and antireflection coating deposition on the working surfaces of both single- and multijunction cells were made using the special holders. It was shown that additional treatment of solar cells in argon plasma prior to hydrogen plasma treatment and deposition of diamond-like carbon antireflection films led to the improvement of the cell efficiency by up to 60%. Radio frequency waves support plasma generation and improve photoelectric conversion mainly due to reduction of internal stresses at the interfaces. Application of reactive ion etching technique removes the broken layer, reduces elastic strain in the wafer, decreases recombination of charge carriers in the bulk, and provides cell efficiency increase by up to ten times. |
| format | Article |
| id | doaj-art-2ec0ce4b7ecb43c5bc83fd6caacfeea3 |
| institution | Kabale University |
| issn | 1110-662X 1687-529X |
| language | English |
| publishDate | 2016-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | International Journal of Photoenergy |
| spelling | doaj-art-2ec0ce4b7ecb43c5bc83fd6caacfeea32025-02-03T05:57:08ZengWileyInternational Journal of Photoenergy1110-662X1687-529X2016-01-01201610.1155/2016/18152051815205Effect of Plasma, RF, and RIE Treatments on Properties of Double-Sided High Voltage Solar Cells with Vertically Aligned p-n JunctionsMykola O. Semenenko0Mykhailo G. Dusheiko1Sergiy V. Mamykin2Valeriy O. Ganus3Mykhailo V. Kirichenko4Roman V. Zaitsev5Mykola M. Kharchenko6N. I. Klyui7College of Physics, Jilin University, Changchun 130012, ChinaNational Technical University of Ukraine “KPI”, 37 Pr. Peremohy, Kyiv, UkraineV. Lashkaryov Institute of Semiconductor Physics of the NAS of Ukraine, 41 Nauky Pr., Kyiv 03680, UkraineV. Lashkaryov Institute of Semiconductor Physics of the NAS of Ukraine, 41 Nauky Pr., Kyiv 03680, UkraineNational Technical University “Kharkiv Polytechnic Institute”, 21 Frunze St., Kharkiv 61002, UkraineNational Technical University “Kharkiv Polytechnic Institute”, 21 Frunze St., Kharkiv 61002, UkraineNational Technical University “Kharkiv Polytechnic Institute”, 21 Frunze St., Kharkiv 61002, UkraineCollege of Physics, Jilin University, Changchun 130012, ChinaSi-based solar cells with vertically aligned p-n junctions operating at high voltage were designed and fabricated. The plasma treatments and antireflection coating deposition on the working surfaces of both single- and multijunction cells were made using the special holders. It was shown that additional treatment of solar cells in argon plasma prior to hydrogen plasma treatment and deposition of diamond-like carbon antireflection films led to the improvement of the cell efficiency by up to 60%. Radio frequency waves support plasma generation and improve photoelectric conversion mainly due to reduction of internal stresses at the interfaces. Application of reactive ion etching technique removes the broken layer, reduces elastic strain in the wafer, decreases recombination of charge carriers in the bulk, and provides cell efficiency increase by up to ten times.http://dx.doi.org/10.1155/2016/1815205 |
| spellingShingle | Mykola O. Semenenko Mykhailo G. Dusheiko Sergiy V. Mamykin Valeriy O. Ganus Mykhailo V. Kirichenko Roman V. Zaitsev Mykola M. Kharchenko N. I. Klyui Effect of Plasma, RF, and RIE Treatments on Properties of Double-Sided High Voltage Solar Cells with Vertically Aligned p-n Junctions International Journal of Photoenergy |
| title | Effect of Plasma, RF, and RIE Treatments on Properties of Double-Sided High Voltage Solar Cells with Vertically Aligned p-n Junctions |
| title_full | Effect of Plasma, RF, and RIE Treatments on Properties of Double-Sided High Voltage Solar Cells with Vertically Aligned p-n Junctions |
| title_fullStr | Effect of Plasma, RF, and RIE Treatments on Properties of Double-Sided High Voltage Solar Cells with Vertically Aligned p-n Junctions |
| title_full_unstemmed | Effect of Plasma, RF, and RIE Treatments on Properties of Double-Sided High Voltage Solar Cells with Vertically Aligned p-n Junctions |
| title_short | Effect of Plasma, RF, and RIE Treatments on Properties of Double-Sided High Voltage Solar Cells with Vertically Aligned p-n Junctions |
| title_sort | effect of plasma rf and rie treatments on properties of double sided high voltage solar cells with vertically aligned p n junctions |
| url | http://dx.doi.org/10.1155/2016/1815205 |
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