Enhanced etch characteristics of EUV PR masked SiON through the ion beam grid pulsing technique

Enhanced etch characteristics of EUV PR masked SiON through the ion beam grid pulsing technique

Abstract EUV lithography technology, applied in nano-patterning processes, enables the creation of fine patterns below 10 nm. However, issues still remain due to the reduced etch selectivity and increased line edge roughness (LER) caused by the thin thickness and weakness of organic EUV photoresist...

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Main Authors: Hae In Kwon, Yun Jong Jang, Kyoung Chan Kim, Hong Seong Gil, Ju Young Kim, Seong Hyun Ryu, Do Seong Pyun, Dae Whan Kim, Woo Chang Park, Ji Yeon Lee, Jin Woo Park, Sang Wuk Park, Geun Young Yeom
Format: Article
Language:English
Published: Nature Portfolio 2025-06-01
Series:Scientific Reports
Subjects:
Ion beam etching
EUV PR
SiON
Grid pulsing
LER
Etch selectivity
Online Access:https://doi.org/10.1038/s41598-025-04632-x
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https://doi.org/10.1038/s41598-025-04632-x

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