Material Properties of n‐Type β‐Ga2O3 Epilayers with In Situ Doping Grown on Sapphire by Metalorganic Chemical Vapor Deposition

Material Properties of n‐Type β‐Ga2O3 Epilayers with In Situ Doping Grown on Sapphire by Metalorganic Chemical Vapor Deposition

Abstract In this study, in situ, Si‐doped heteroepitaxial Ga2O3 layers are grown on c‐plane sapphire by metalorganic chemical vapor deposition. The X‐ray diffraction peaks of the doped Ga2O3 epilayers shows ß‐phase of Ga2O3 ,and full width at half maximum of Ga2O3 crystallinity is decreased at a Tet...

Full description

Saved in:
Bibliographic Details
Main Authors: Fu‐Gow Tarntair, Chih‐Yang Huang, Siddharth Rana, Kun‐Lin Lin, Shao‐Hui Hsu, Yu‐Cheng Kao, Singh Jitendra Pratap, Yi‐Che Chen, Niall Tumilty, Po‐Liang Liu, Ray‐Hua Horng
Format: Article
Language:English
Published: Wiley-VCH 2025-01-01
Series:Advanced Electronic Materials
Subjects:
density functional theory
heteroepitaxial Ga2O3, MOCVD
in situ doping
TEOS
Online Access:https://doi.org/10.1002/aelm.202300679
Tags: Add Tag
No Tags, Be the first to tag this record!

Internet

https://doi.org/10.1002/aelm.202300679

Similar Items