Impact of PECVD deposition on dielectric charge and passivation for n-GaN/SiOx interfaces

Impact of PECVD deposition on dielectric charge and passivation for n-GaN/SiOx interfaces

Controlling properties of GaN/dielectric interfaces is crucial for determining the characteristics of MOS-HEMT devices and their stability. Interface properties are largely affected by the techniques and specific conditions of dielectric deposition. In this work, a Taguchi design of experiment was a...

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Bibliographic Details
Main Authors: Olivier Richard, Ali Soltani, Rahma Adhiri, Ali Ahaitouf, Hassan Maher, Vincent Aimez, Abdelatif Jaouad
Format: Article
Language:English
Published: Elsevier 2024-12-01
Series:Results in Materials
Subjects:
GaN
Surface passivation
PECVD
Silicon oxide
MOS devices
Fixed charge
Online Access:http://www.sciencedirect.com/science/article/pii/S2590048X24001195
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