Research on Single-Event Effect Hardening Method of Transverse Split-Gate Trench Metal-Oxide-Semiconductor Field-Effect Transistors

Research on Single-Event Effect Hardening Method of Transverse Split-Gate Trench Metal-Oxide-Semiconductor Field-Effect Transistors

In this work, the single-event burnout (SEB) effect and degradation behaviors induced by heavy-ion irradiation are investigated in a 120 V-rated transverse split-gate trench (TSGT) power metal-oxide-semiconductor field-effect transistor (MOSFET). Bismuth heavy-ions are used to conduct heavy-ion irra...

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Bibliographic Details
Main Authors: Mengtian Bao, Ying Wang, Jianqun Yang, Xingji Li
Format: Article
Language:English
Published: MDPI AG 2025-03-01
Series:Micromachines
Subjects:
power MOSFET
single-event effect
SEB hardening
process optimization
Online Access:https://www.mdpi.com/2072-666X/16/4/417
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