Lossless Phonon Transition Through GaN‐Diamond and Si‐Diamond Interfaces

Lossless Phonon Transition Through GaN‐Diamond and Si‐Diamond Interfaces

Abstract Advancing Silicon (Si) technology beyond Moore's law through 3D architectures requires highly efficient heat management methods compatible with foundry processes. While continued increases in transistor density can be achieved through 3D architectures, self‐heating in the upper tiers d...

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Main Authors: Mohamadali Malakoutian, Kelly Woo, Dennis Rich, Ramandeep Mandia, Xiang Zheng, Anna Kasperovich, Devansh Saraswat, Rohith Soman, Youhwan Jo, Thomas Pfeifer, Taesoon Hwang, Henry Aller, Jeongkyu Kim, Junrui Lyu, Janelle Keionna Mabrey, Thomas Andres Rodriguez, James Pomeroy, Patrick E. Hopkins, Samuel Graham, David J. Smith, Subhasish Mitra, Kyeongjae Cho, Martin Kuball, Srabanti Chowdhury
Format: Article
Language:English
Published: Wiley-VCH 2025-01-01
Series:Advanced Electronic Materials
Subjects:
diamond
interface engineering
Moore's law
thermal boundary resistance
thermal management
ultra‐wide‐bandgap
Online Access:https://doi.org/10.1002/aelm.202400146
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https://doi.org/10.1002/aelm.202400146

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