The Photoelectric Properties of Intrinsic Oxide - p-In4Se3 Heterojunctions
The intrinsic oxide - p-In4Se3 heterojunction was fabricated by the method of thermal oxidation of semiconductor substrate for the first time. The qualitative energy band diagram was built on the basis of analysis of electrical and photovoltaic characteristics of the heterojunction. The character of...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Sumy State University
2016-10-01
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| Series: | Журнал нано- та електронної фізики |
| Subjects: | |
| Online Access: | http://jnep.sumdu.edu.ua/download/numbers/2016/3/articles/Proof_jnep_2016_V8_03032.pdf |
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