Quantitative Defect Analysis in CVD‐Grown Monolayer MoS2 via In‐Plane Raman Vibration

Quantitative Defect Analysis in CVD‐Grown Monolayer MoS2 via In‐Plane Raman Vibration

ABSTRACT The synthesis of two‐dimensional transition metal dichalcogenide (2D‐TMD) materials gives rise to inherent defects, specifically chalcogen vacancies, due to thermodynamic equilibrium. Techniques such as chemical vapor deposition (CVD), metal‐organic chemical vapor deposition (MOCVD), atomic...

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Bibliographic Details
Main Authors: Moha Feroz Hossen, Sachin Shendokar, Md. Arifur Rahman Khan, Shyam Aravamudhan
Format: Article
Language:English
Published: Wiley-VCH 2025-04-01
Series:Nano Select
Subjects:
chemical vapor deposition
in‐plane vibration
monolayer molybdenum disulfide
photoluminescence
point defects
Raman spectroscopy
Online Access:https://doi.org/10.1002/nano.202400103
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https://doi.org/10.1002/nano.202400103

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