Photoelastic Refractive Index Changes in GaAs Investigated by Finite Element Method (FEM) Simulations
Changes in the refractive indices of a GaAs laser chip owing to bonding strain are investigated by two-dimensional (2D) and three-dimensional (3D) finite element method (FEM) simulations. The strain induced by die attach (i.e., the bonding strain) was estimated by fitting simulations to the measured...
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| Format: | Article |
| Language: | English |
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MDPI AG
2025-05-01
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| Series: | Optics |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2673-3269/6/2/21 |
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