A review on research development of SiC trench gate MOSFET technology
The third-generation wide-bandgap semiconductor silicon carbide (SiC) MOSFET devices have rapidly become a research hotspot in the production and research sectors due to their advantages, such as high voltage resistance, high-temperature resistance and low loss. This paper, in conjunction with the d...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | zho |
| Published: |
Editorial Department of Electric Drive for Locomotives
2023-09-01
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| Series: | 机车电传动 |
| Subjects: | |
| Online Access: | http://edl.csrzic.com/thesisDetails#10.13890/j.issn.1000-128X.2023.05.002 |
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