Optimizing the morphology transition on MOVPE-grown (100) β-Ga2O3 film between step-flow growth and step-bunching: A machine learning-assisted approach

The step-bunching instability in (100) β-Ga2O3 films grown via metalorganic vapor phase epitaxy was investigated using a machine learning approach based on Random Forest (RF). This study reveals the interplay of Ga supersaturation (O2/Ga) and impurity effects as coexisting mechanisms driving the mor...

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Bibliographic Details
Main Authors: Ta-Shun Chou, Saud Bin Anooz, Natasha Dropka, Han-Hsu Chen, Zbigniew Galazka, Martin Albrecht, Andreas Fiedler, Andreas Popp
Format: Article
Language:English
Published: AIP Publishing LLC 2025-05-01
Series:APL Materials
Online Access:http://dx.doi.org/10.1063/5.0261944
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