Fabrication of air bridges on (100) β-Ga2O3 using crystallographic HCl gas etching
β-Ga2O3 air bridges on (100) substrates were fabricated through a self-aligning process that used conventional anisotropic BCl3/Ar-plasma etching and crystallographic plasma-free HCl gas etching. The former etching can be done as vertic...
Saved in:
| Main Authors: | Takayoshi Oshima, Yuichi Oshima |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2025-05-01
|
| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0260753 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
-
Epitaxial lateral overgrowth of m-plane α-Ga2O3 by halide vapor phase epitaxy
by: Yuichi Oshima, et al.
Published: (2025-12-01) -
Research on Wet Etching Techniques for GaInAs/AlInAs/InP Superlattices in Quantum Cascade Laser Fabrication
by: Shiya Zhang, et al.
Published: (2025-03-01) -
Telecom O-Band Quantum Dots Fabricated by Droplet Etching
by: Nikolai Spitzer, et al.
Published: (2024-11-01) -
Enhanced etching of GaN with N2 gas addition during CVD diamond growth
by: Awadesh Kumar Mallik, et al.
Published: (2024-12-01) -
Optimization of NoN-melt-back-etching and selectivity for selective area growth of GaN drain on Si (100) substrate
by: Cheng-Jun Huang, et al.
Published: (2025-05-01)