Y-Function Analysis of the Low Temperature Behavior of Ultrathin Film FD SOI MOSFETs
The respective transfer characteristics of the ultrathin body (UTB) and gate recessed channel (GRC) device, sharing same W/L ratio but having a channel thickness of 46 nm, and 2.2 nm respectively, were measured at 300 K and at 77 K. By decreasing the temperature we found that the electrical behavior...
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| Format: | Article |
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Wiley
2014-01-01
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| Series: | Active and Passive Electronic Components |
| Online Access: | http://dx.doi.org/10.1155/2014/697369 |
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| author | A. Karsenty A. Chelly |
| author_facet | A. Karsenty A. Chelly |
| author_sort | A. Karsenty |
| collection | DOAJ |
| description | The respective transfer characteristics of the ultrathin body (UTB) and gate recessed channel (GRC) device, sharing same W/L ratio but having a channel thickness of 46 nm, and 2.2 nm respectively, were measured at 300 K and at 77 K. By decreasing the temperature we found that the electrical behaviors of these devices were radically opposite: if for UTB device, the conductivity was increased, the opposite effect was observed for GRC. The low field electron mobility and series resistance RSD values were extracted using a method based on Y-function for both the temperatures. If RSD low values were found for UTB, very high values (>1 MΩ) were extracted for GRC. Surprisingly, for the last device, the effective field mobility is found very low (<1 cm2/Vs) and is decreasing by lowering the temperature. After having discussed the limits of this analysis.This case study illustrates the advantage of the Y-analysis in discriminating a parameter of great relevance for nanoscale devices and gives a coherent interpretation of an anomalous electrical behavior. |
| format | Article |
| id | doaj-art-1f0352a9e6ac40fb9c2f821888e1eb99 |
| institution | Kabale University |
| issn | 0882-7516 1563-5031 |
| language | English |
| publishDate | 2014-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Active and Passive Electronic Components |
| spelling | doaj-art-1f0352a9e6ac40fb9c2f821888e1eb992025-02-03T05:53:36ZengWileyActive and Passive Electronic Components0882-75161563-50312014-01-01201410.1155/2014/697369697369Y-Function Analysis of the Low Temperature Behavior of Ultrathin Film FD SOI MOSFETsA. Karsenty0A. Chelly1Department of Applied Physics, Faculty of Engineering, Jerusalem College of Technology, 91160 Jerusalem, IsraelFaculty of Engineering, Bar-Ilan University, 52900 Ramat Gan, IsraelThe respective transfer characteristics of the ultrathin body (UTB) and gate recessed channel (GRC) device, sharing same W/L ratio but having a channel thickness of 46 nm, and 2.2 nm respectively, were measured at 300 K and at 77 K. By decreasing the temperature we found that the electrical behaviors of these devices were radically opposite: if for UTB device, the conductivity was increased, the opposite effect was observed for GRC. The low field electron mobility and series resistance RSD values were extracted using a method based on Y-function for both the temperatures. If RSD low values were found for UTB, very high values (>1 MΩ) were extracted for GRC. Surprisingly, for the last device, the effective field mobility is found very low (<1 cm2/Vs) and is decreasing by lowering the temperature. After having discussed the limits of this analysis.This case study illustrates the advantage of the Y-analysis in discriminating a parameter of great relevance for nanoscale devices and gives a coherent interpretation of an anomalous electrical behavior.http://dx.doi.org/10.1155/2014/697369 |
| spellingShingle | A. Karsenty A. Chelly Y-Function Analysis of the Low Temperature Behavior of Ultrathin Film FD SOI MOSFETs Active and Passive Electronic Components |
| title | Y-Function Analysis of the Low Temperature Behavior of Ultrathin Film FD SOI MOSFETs |
| title_full | Y-Function Analysis of the Low Temperature Behavior of Ultrathin Film FD SOI MOSFETs |
| title_fullStr | Y-Function Analysis of the Low Temperature Behavior of Ultrathin Film FD SOI MOSFETs |
| title_full_unstemmed | Y-Function Analysis of the Low Temperature Behavior of Ultrathin Film FD SOI MOSFETs |
| title_short | Y-Function Analysis of the Low Temperature Behavior of Ultrathin Film FD SOI MOSFETs |
| title_sort | y function analysis of the low temperature behavior of ultrathin film fd soi mosfets |
| url | http://dx.doi.org/10.1155/2014/697369 |
| work_keys_str_mv | AT akarsenty yfunctionanalysisofthelowtemperaturebehaviorofultrathinfilmfdsoimosfets AT achelly yfunctionanalysisofthelowtemperaturebehaviorofultrathinfilmfdsoimosfets |