Current Novel Power Semiconductor Devices with Megawatts Level of China
It is introduced the development, technique performance and the application field of megawatts grade new power semiconductor devices such as large PCT,IGBT and IGCT. The physical limitation and future development of the devices are primarily discussed.
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| Format: | Article |
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| Language: | zho |
| Published: |
Editorial Office of Control and Information Technology
2012-01-01
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| Series: | Kongzhi Yu Xinxi Jishu |
| Online Access: | http://ctet.csrzic.com/thesisDetails#10.13889/j.issn.2095-3631.2012.01.001 |
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