Toward high-current-density and high-frequency graphene resonant tunneling transistors
Abstract Negative differential resistance (NDR), a peculiar electrical property in which current decreases with increasing voltage, is highly desirable for multivalued logic gates, memory devices, and oscillators. Recently, 2D quantum-tunneling NDR devices have attracted considerable attention becau...
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| Main Authors: | Zihao Zhang, Baoqing Zhang, Yifei Zhang, Yiming Wang, Patrick Hays, Seth Ariel Tongay, Mingyang Wang, Hecheng Han, Hu Li, Jiawei Zhang, Aimin Song |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2025-05-01
|
| Series: | Nature Communications |
| Online Access: | https://doi.org/10.1038/s41467-025-58720-7 |
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