Three-dimensional photoluminescence imaging of threading dislocations in GaN by sub-band optical excitation

Three-dimensional photoluminescence imaging of threading dislocations in GaN by sub-band optical excitation

Abstract GaN is rapidly gaining attention for implementation in power electronics but is still impacted by its high density of threading dislocations (TDs), which have been shown to facilitate current leakage through devices limiting their performance and reliability. Here, we discuss a novel implem...

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Main Authors: Matthias Daeumer, Jae-Hyuck Yoo, Zhiyu Xu, Minkyu Cho, Marzieh Bakhtiary-Noodeh, Theeradetch Detchprohm, Yuxuan Zhang, Vijay Gopal Thirupakuzi Vangipuram, Vishank Talesara, Yibo Xu, Edward Letts, Daryl Key, Tian T. Li, Qinghui Shao, Russell Dupuis, Shyh-Chiang Shen, Wu Lu, Hongping Zhao, Tadao Hashimoto, Ted A. Laurence
Format: Article
Language:English
Published: Nature Portfolio 2025-01-01
Series:Scientific Reports
Online Access:https://doi.org/10.1038/s41598-024-83398-0
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https://doi.org/10.1038/s41598-024-83398-0

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