Effect of Oxidation Temperature and Chlorine Source on the Gate Oxidation Process for High Power IGBT
Two main gate oxidation processes of high power IGBT based on dry oxidation and wet oxidation were studied by capacitance-voltage (C-V) method. Effect of oxidation temperature and chlorine source on the quality of gate oxidation, especially on fixed oxide charge (Nss) and interface trapped charge (D...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | zho |
| Published: |
Editorial Office of Control and Information Technology
2015-01-01
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| Series: | Kongzhi Yu Xinxi Jishu |
| Subjects: | |
| Online Access: | http://ctet.csrzic.com/thesisDetails#10.13889/j.issn.2095-3631.2015.06.009 |
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