Simulation Study on Single-Event Burnout Reliability of 900V 4H-SiC Quasi Vertical Double Diffused MOSFET
In this work, the single-event burnout (SEB) performance and reasons of the proposed 900V SiC quasi-vertical double diffusion MOSFET with deepened drain (T-QVDMOSFET) are analyzed from the spatial distribution of physical quantities such as power density, lattice temperature and total current densit...
Saved in:
| Main Authors: | , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
IEEE
2025-01-01
|
| Series: | IEEE Access |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/10818673/ |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|