Determination of Temperature-Dependent Stress State in Thin AlGaN Layer of AlGaN/GaN HEMT Heterostructures by Near-Resonant Raman Scattering

The temperature-dependent stress state in the AlGaN barrier layer of AlGaN/GaN heterostructure grown on sapphire substrate was investigated by ultraviolet (UV) near-resonant Raman scattering. Strong scattering peak resulting from the A1(LO) phonon mode of AlGaN is observed under near-resonance condi...

Full description

Saved in:
Bibliographic Details
Main Authors: Yanli Liu, Xifeng Yang, Dunjun Chen, Hai Lu, Rong Zhang, Youdou Zheng
Format: Article
Language:English
Published: Wiley 2015-01-01
Series:Advances in Condensed Matter Physics
Online Access:http://dx.doi.org/10.1155/2015/918428
Tags: Add Tag
No Tags, Be the first to tag this record!