Analysis of Hot-Carrier Degradation in Small and Large W/L n-Channel Transistors
Device degradation due to hot-carrier in n-channel HEXFETs is shown to be related to the device geometrical structure. The form of I-V characteristics of the body-drain junction is found dependent of the hot-carrier stressing and of the layer dimensions. A large increases of the ideality factor, of...
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| Format: | Article |
| Language: | English |
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Wiley
1998-01-01
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| Series: | Active and Passive Electronic Components |
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| Online Access: | http://dx.doi.org/10.1155/1998/69085 |
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| _version_ | 1832566524398796800 |
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| author | E. Bendada K. Raïs |
| author_facet | E. Bendada K. Raïs |
| author_sort | E. Bendada |
| collection | DOAJ |
| description | Device degradation due to hot-carrier in n-channel HEXFETs is shown to be related to
the device geometrical structure. The form of I-V characteristics of the body-drain
junction is found dependent of the hot-carrier stressing and of the layer dimensions. A
large increases of the ideality factor, of the reverse recombination current, and of the
series resistance are shown to be more significant for small values of L and W. It is
demonstrated that the degradation of parameters is mainly caused by the generation of
interface traps. |
| format | Article |
| id | doaj-art-11294bbb195e4969891dcc808092ef2c |
| institution | Kabale University |
| issn | 0882-7516 1563-5031 |
| language | English |
| publishDate | 1998-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Active and Passive Electronic Components |
| spelling | doaj-art-11294bbb195e4969891dcc808092ef2c2025-02-03T01:03:47ZengWileyActive and Passive Electronic Components0882-75161563-50311998-01-0121318919810.1155/1998/69085Analysis of Hot-Carrier Degradation in Small and Large W/L n-Channel TransistorsE. Bendada0K. Raïs1Département de Génie Electrique, Universuté My Ismaïl-F.S.T., B.P. 509, Errachidia, MoroccoLaboratoire de Caractérisation des Composants à Semiconducteurs, Université Chouaïb Doukkali, B.P. 20, El Jadida, MoroccoDevice degradation due to hot-carrier in n-channel HEXFETs is shown to be related to the device geometrical structure. The form of I-V characteristics of the body-drain junction is found dependent of the hot-carrier stressing and of the layer dimensions. A large increases of the ideality factor, of the reverse recombination current, and of the series resistance are shown to be more significant for small values of L and W. It is demonstrated that the degradation of parameters is mainly caused by the generation of interface traps.http://dx.doi.org/10.1155/1998/69085Hot-carrier degradationMOSFETgate geometry. |
| spellingShingle | E. Bendada K. Raïs Analysis of Hot-Carrier Degradation in Small and Large W/L n-Channel Transistors Active and Passive Electronic Components Hot-carrier degradation MOSFET gate geometry. |
| title | Analysis of Hot-Carrier Degradation in Small and Large W/L n-Channel Transistors |
| title_full | Analysis of Hot-Carrier Degradation in Small and Large W/L n-Channel Transistors |
| title_fullStr | Analysis of Hot-Carrier Degradation in Small and Large W/L n-Channel Transistors |
| title_full_unstemmed | Analysis of Hot-Carrier Degradation in Small and Large W/L n-Channel Transistors |
| title_short | Analysis of Hot-Carrier Degradation in Small and Large W/L n-Channel Transistors |
| title_sort | analysis of hot carrier degradation in small and large w l n channel transistors |
| topic | Hot-carrier degradation MOSFET gate geometry. |
| url | http://dx.doi.org/10.1155/1998/69085 |
| work_keys_str_mv | AT ebendada analysisofhotcarrierdegradationinsmallandlargewlnchanneltransistors AT krais analysisofhotcarrierdegradationinsmallandlargewlnchanneltransistors |