InGaN multiquantum wells—problem of carrier injection
Abstract This study addresses the issue of effective carrier injection to quantum wells in laser diode structures. The nitride light emitting structures used in this study were fabricated by Metal-Organic Vapor Phase Epitaxy (MOVPE). We developed three distinct sets of samples, with varying quantum...
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| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2025-01-01
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| Series: | Scientific Reports |
| Online Access: | https://doi.org/10.1038/s41598-025-86774-6 |
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