Investigation for the Temperature Dependence of 2D Electron Gas Behaviors in GaN‐based Multichannel Heterostructures Systems
Abstract In this study, 2 electron gas(2DEG) behaviors in Al0.28Ga0.72N/GaN multichannel heterostructures with doped and undoped barrier layers and lattice‐matched In0.10Al0.40Ga0.50N/GaN multichannel heterostructures are investigated. Within the temperature range of 300–425 K, the sheet resistance...
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| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley-VCH
2025-06-01
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| Series: | Advanced Materials Interfaces |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/admi.202500030 |
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