13 µm cutoff InAs/GaSb type-II superlattice nBn detectors with high quantum efficiency grown by MOCVD
In this work, we report the growth and fabrication optimization of a long wavelength InAs/GaSb type-II superlattice (T2SL) nBn detector grown by metal–organic chemical vapor deposition. A GaAs like interfacial scheme was employed to grow the T2SLs matched to InAs substrates. A larger bandgap InAs/Ga...
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| Main Authors: | , , , , , , , , , |
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| Format: | Article |
| Language: | English |
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AIP Publishing LLC
2025-01-01
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| Series: | APL Photonics |
| Online Access: | http://dx.doi.org/10.1063/5.0231448 |
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| author | Richard Brown Chen Liu George Seager Francisco Alvarado Ka Ming Wong Adam P. Craig Richard Beanland Andrew R. J. Marshall J. Iwan Davies Qiang Li |
| author_facet | Richard Brown Chen Liu George Seager Francisco Alvarado Ka Ming Wong Adam P. Craig Richard Beanland Andrew R. J. Marshall J. Iwan Davies Qiang Li |
| author_sort | Richard Brown |
| collection | DOAJ |
| description | In this work, we report the growth and fabrication optimization of a long wavelength InAs/GaSb type-II superlattice (T2SL) nBn detector grown by metal–organic chemical vapor deposition. A GaAs like interfacial scheme was employed to grow the T2SLs matched to InAs substrates. A larger bandgap InAs/GaSb T2SL was used as an electron barrier, removing the need for AlSb based materials within this detector. At 77 K and −0.1 V, the photodetector showed a dark current density of 2.2 × 10−2 A cm−2 and a 100% cutoff wavelength of 13 µm. The external quantum efficiency was found to be 54.4% at 9 µm. The peak detectivity was found to be 4.43 × 1010 cm Hz1/2/W at 9 µm, which is very comparable with similar deep etched detectors grown by molecular beam epitaxy. |
| format | Article |
| id | doaj-art-0b2029d0556f47f5ac9d782576988a02 |
| institution | Kabale University |
| issn | 2378-0967 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | APL Photonics |
| spelling | doaj-art-0b2029d0556f47f5ac9d782576988a022025-02-03T16:36:22ZengAIP Publishing LLCAPL Photonics2378-09672025-01-01101016102016102-810.1063/5.023144813 µm cutoff InAs/GaSb type-II superlattice nBn detectors with high quantum efficiency grown by MOCVDRichard Brown0Chen Liu1George Seager2Francisco Alvarado3Ka Ming Wong4Adam P. Craig5Richard Beanland6Andrew R. J. Marshall7J. Iwan Davies8Qiang Li9School of Physics and Astronomy, Cardiff University, Cardiff CF24 3AA, United KingdomSchool of Physics and Astronomy, Cardiff University, Cardiff CF24 3AA, United KingdomDepartment of Physics, Lancaster University, Lancaster LA1 4YB, United KingdomDepartment of Physics, University of Warwick, Coventry CV4 7AL, United KingdomSchool of Physics and Astronomy, Cardiff University, Cardiff CF24 3AA, United KingdomDepartment of Physics, Lancaster University, Lancaster LA1 4YB, United KingdomDepartment of Physics, University of Warwick, Coventry CV4 7AL, United KingdomDepartment of Physics, Lancaster University, Lancaster LA1 4YB, United KingdomIQE plc., Cardiff CF3 0LW, United KingdomSchool of Physics and Astronomy, Cardiff University, Cardiff CF24 3AA, United KingdomIn this work, we report the growth and fabrication optimization of a long wavelength InAs/GaSb type-II superlattice (T2SL) nBn detector grown by metal–organic chemical vapor deposition. A GaAs like interfacial scheme was employed to grow the T2SLs matched to InAs substrates. A larger bandgap InAs/GaSb T2SL was used as an electron barrier, removing the need for AlSb based materials within this detector. At 77 K and −0.1 V, the photodetector showed a dark current density of 2.2 × 10−2 A cm−2 and a 100% cutoff wavelength of 13 µm. The external quantum efficiency was found to be 54.4% at 9 µm. The peak detectivity was found to be 4.43 × 1010 cm Hz1/2/W at 9 µm, which is very comparable with similar deep etched detectors grown by molecular beam epitaxy.http://dx.doi.org/10.1063/5.0231448 |
| spellingShingle | Richard Brown Chen Liu George Seager Francisco Alvarado Ka Ming Wong Adam P. Craig Richard Beanland Andrew R. J. Marshall J. Iwan Davies Qiang Li 13 µm cutoff InAs/GaSb type-II superlattice nBn detectors with high quantum efficiency grown by MOCVD APL Photonics |
| title | 13 µm cutoff InAs/GaSb type-II superlattice nBn detectors with high quantum efficiency grown by MOCVD |
| title_full | 13 µm cutoff InAs/GaSb type-II superlattice nBn detectors with high quantum efficiency grown by MOCVD |
| title_fullStr | 13 µm cutoff InAs/GaSb type-II superlattice nBn detectors with high quantum efficiency grown by MOCVD |
| title_full_unstemmed | 13 µm cutoff InAs/GaSb type-II superlattice nBn detectors with high quantum efficiency grown by MOCVD |
| title_short | 13 µm cutoff InAs/GaSb type-II superlattice nBn detectors with high quantum efficiency grown by MOCVD |
| title_sort | 13 µm cutoff inas gasb type ii superlattice nbn detectors with high quantum efficiency grown by mocvd |
| url | http://dx.doi.org/10.1063/5.0231448 |
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