13 µm cutoff InAs/GaSb type-II superlattice nBn detectors with high quantum efficiency grown by MOCVD

13 µm cutoff InAs/GaSb type-II superlattice nBn detectors with high quantum efficiency grown by MOCVD

In this work, we report the growth and fabrication optimization of a long wavelength InAs/GaSb type-II superlattice (T2SL) nBn detector grown by metal–organic chemical vapor deposition. A GaAs like interfacial scheme was employed to grow the T2SLs matched to InAs substrates. A larger bandgap InAs/Ga...

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Bibliographic Details
Main Authors: Richard Brown, Chen Liu, George Seager, Francisco Alvarado, Ka Ming Wong, Adam P. Craig, Richard Beanland, Andrew R. J. Marshall, J. Iwan Davies, Qiang Li
Format: Article
Language:English
Published: AIP Publishing LLC 2025-01-01
Series:APL Photonics
Online Access:http://dx.doi.org/10.1063/5.0231448
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http://dx.doi.org/10.1063/5.0231448

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