Discrete-Trap Effects on 3-D NAND Variability – Part II: Random Telegraph Noise
In Part II of this article we discuss the impact of a discrete treatment of traps on 3-D NAND Flash random telegraph noise (RTN). A higher RTN results when discrete traps are taken into account, that can only be explained by a stronger influence of the discrete charged traps on the current conductio...
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Main Authors: | Gerardo Malavena, Salvatore M. Amoroso, Andrew R. Brown, Plamen Asenov, Xi-Wei Lin, Victor Moroz, Mattia Giulianini, David Refaldi, Christian Monzio Compagnoni, Alessandro S. Spinelli |
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Format: | Article |
Language: | English |
Published: |
IEEE
2024-01-01
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Series: | IEEE Journal of the Electron Devices Society |
Subjects: | |
Online Access: | https://ieeexplore.ieee.org/document/10643403/ |
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