Formation and structural studies of integrated membranes based on channel silicon
A method for obtaining structures for integrated membranes based on channel silicon is proposed. In this work features of the formation of through channels in electronic silicon are considered depending on the composition of the electrolyte, the concentration of charge carriers and anode etching...
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| Format: | Article |
| Language: | English |
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Omsk State Technical University, Federal State Autonoumos Educational Institution of Higher Education
2018-07-01
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| Series: | Омский научный вестник |
| Subjects: | |
| Online Access: | https://www.omgtu.ru/general_information/media_omgtu/journal_of_omsk_research_journal/files/arhiv/2018/3%20(159)/59-63%20%D0%91%D0%BE%D0%BB%D0%BE%D1%82%D0%BE%D0%B2%20%D0%92.%20%D0%92.,%20%D0%98%D0%B2%D0%BB%D0%B5%D0%B2%20%D0%9A.%20%D0%95.,%20%D0%9A%D0%BD%D1%8F%D0%B7%D0%B5%D0%B2%20%D0%95.%20%D0%92.,%20%D0%9F%D0%BE%D0%BD%D0%BE%D0%BC%D0%B0%D1%80%D0%B5%D0%B2%D0%B0%20%D0%98.%20%D0%92..pdf |
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| _version_ | 1832569370059997184 |
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| author | V. V. Bolotov K. E. Ivlev E. V. Knyazev I. V. Ponomareva |
| author_facet | V. V. Bolotov K. E. Ivlev E. V. Knyazev I. V. Ponomareva |
| author_sort | V. V. Bolotov |
| collection | DOAJ |
| description | A method for obtaining structures for integrated membranes
based on channel silicon is proposed. In this work features of the
formation of through channels in electronic silicon are considered
depending on the composition of the electrolyte, the concentration
of charge carriers and anode etching regimes. It is shown that
porous structures in the form of «bottlenecks» are formed under
the used regimes. It has been established that in the electrolyte
based on HF: C3
H7
OH, to obtain porous layers with a thickness of
more than 100 μm, it is necessary to interrupt the anodic etching
process, which is due to the feature of pore formation. For the
electrolyte based on HF: (CH3
)2CO, the duration of etching may
be longer, which is associated with a higher solubility of hydrogen
in acetone than isopropanol. The average pore diameter in this
electrolyte grows more slowly with depth compared to the use
of the HF: C3
H7
OH electrolyte. This effect can be explained by
facilitating diffusion in the structures of not only hydrogen but
also fluoride ions. |
| format | Article |
| id | doaj-art-095604cb5ffb4064aeb2a468691acbfd |
| institution | Kabale University |
| issn | 1813-8225 2541-7541 |
| language | English |
| publishDate | 2018-07-01 |
| publisher | Omsk State Technical University, Federal State Autonoumos Educational Institution of Higher Education |
| record_format | Article |
| series | Омский научный вестник |
| spelling | doaj-art-095604cb5ffb4064aeb2a468691acbfd2025-02-02T21:39:14ZengOmsk State Technical University, Federal State Autonoumos Educational Institution of Higher EducationОмский научный вестник1813-82252541-75412018-07-013 (159)596310.25206/1813-8225-2018-159-59-63Formation and structural studies of integrated membranes based on channel siliconV. V. Bolotov0K. E. Ivlev1E. V. Knyazev2I. V. Ponomareva3Omsk Scientific Center of the Siberian Branch of the Russian Academy of SciencesOmsk Scientific Center of the Siberian Branch of the Russian Academy of SciencesOmsk Scientific Center of the Siberian Branch of the Russian Academy of SciencesOmsk Scientific Center of the Siberian Branch of the Russian Academy of SciencesA method for obtaining structures for integrated membranes based on channel silicon is proposed. In this work features of the formation of through channels in electronic silicon are considered depending on the composition of the electrolyte, the concentration of charge carriers and anode etching regimes. It is shown that porous structures in the form of «bottlenecks» are formed under the used regimes. It has been established that in the electrolyte based on HF: C3 H7 OH, to obtain porous layers with a thickness of more than 100 μm, it is necessary to interrupt the anodic etching process, which is due to the feature of pore formation. For the electrolyte based on HF: (CH3 )2CO, the duration of etching may be longer, which is associated with a higher solubility of hydrogen in acetone than isopropanol. The average pore diameter in this electrolyte grows more slowly with depth compared to the use of the HF: C3 H7 OH electrolyte. This effect can be explained by facilitating diffusion in the structures of not only hydrogen but also fluoride ions.https://www.omgtu.ru/general_information/media_omgtu/journal_of_omsk_research_journal/files/arhiv/2018/3%20(159)/59-63%20%D0%91%D0%BE%D0%BB%D0%BE%D1%82%D0%BE%D0%B2%20%D0%92.%20%D0%92.,%20%D0%98%D0%B2%D0%BB%D0%B5%D0%B2%20%D0%9A.%20%D0%95.,%20%D0%9A%D0%BD%D1%8F%D0%B7%D0%B5%D0%B2%20%D0%95.%20%D0%92.,%20%D0%9F%D0%BE%D0%BD%D0%BE%D0%BC%D0%B0%D1%80%D0%B5%D0%B2%D0%B0%20%D0%98.%20%D0%92..pdfporous siliconscanning electron microscopymembranes |
| spellingShingle | V. V. Bolotov K. E. Ivlev E. V. Knyazev I. V. Ponomareva Formation and structural studies of integrated membranes based on channel silicon Омский научный вестник porous silicon scanning electron microscopy membranes |
| title | Formation and structural studies of integrated membranes based on channel silicon |
| title_full | Formation and structural studies of integrated membranes based on channel silicon |
| title_fullStr | Formation and structural studies of integrated membranes based on channel silicon |
| title_full_unstemmed | Formation and structural studies of integrated membranes based on channel silicon |
| title_short | Formation and structural studies of integrated membranes based on channel silicon |
| title_sort | formation and structural studies of integrated membranes based on channel silicon |
| topic | porous silicon scanning electron microscopy membranes |
| url | https://www.omgtu.ru/general_information/media_omgtu/journal_of_omsk_research_journal/files/arhiv/2018/3%20(159)/59-63%20%D0%91%D0%BE%D0%BB%D0%BE%D1%82%D0%BE%D0%B2%20%D0%92.%20%D0%92.,%20%D0%98%D0%B2%D0%BB%D0%B5%D0%B2%20%D0%9A.%20%D0%95.,%20%D0%9A%D0%BD%D1%8F%D0%B7%D0%B5%D0%B2%20%D0%95.%20%D0%92.,%20%D0%9F%D0%BE%D0%BD%D0%BE%D0%BC%D0%B0%D1%80%D0%B5%D0%B2%D0%B0%20%D0%98.%20%D0%92..pdf |
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