Electrically active defects in Ta-doped β-Ga2O3 grown using the optical floating zone method

Electrically active defects in Ta-doped β-Ga2O3 grown using the optical floating zone method

Deep-level defects in Ta-doped β-Ga2O3 single crystals grown using the optical floating zone method are investigated. Deep-level transient spectroscopy (DLTS) in conjunction with Laplace-DLTS (L-DLTS) and photoluminescence (PL) has been applied to (100) oriented β-Ga2O3:Ta bulk crystals. The tempera...

Full description

Saved in:
Bibliographic Details
Main Authors: Christopher A. Dawe, Lijie Sun, Ananthu Vijayan V. L., Vladimir P. Markevich, Janet Jacobs, Ian D. Hawkins, Matthew P. Halsall, Anthony R. Peaker, David J. Binks, Sai Charan Vanjari, Moorthy Babu Sridharan, Martin Kuball
Format: Article
Language:English
Published: AIP Publishing LLC 2025-04-01
Series:APL Materials
Online Access:http://dx.doi.org/10.1063/5.0261495
Tags: Add Tag
No Tags, Be the first to tag this record!

Internet

http://dx.doi.org/10.1063/5.0261495

Similar Items