Surface quality prediction and validation of Electro-Fenton chemical mechanical polishing for single crystal SiC based on neural network models

To enhance the Electro-Fenton Chemical Mechanical Polishing (EF-CMP) process for single-crystal SiC, this study employs factorial analysis to investigate the influence of process parameters on material removal rate (MRR) and surface roughness Ra. Predictive models are developed using Radial Basis Fu...

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Bibliographic Details
Main Authors: Jiacheng Geng, Jiayun Deng, Zilei Bai, Xiaoning Wen, Jiabin Lu, Qiusheng Yan, Xiaojing Yang
Format: Article
Language:English
Published: Elsevier 2025-09-01
Series:Results in Engineering
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Online Access:http://www.sciencedirect.com/science/article/pii/S2590123025027549
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