Quantum Efficiency Improvement of InGaN Near Ultraviolet LED Design by Genetic Algorithm

Quantum Efficiency Improvement of InGaN Near Ultraviolet LED Design by Genetic Algorithm

A near-ultraviolet (367-nm) InGaN light-emitting diode (LED) with 5.75 nm quantum well depth was designed and both internal/external quantum efficiency (IQE/EQE) values were optimized considering the effects of non-radiative recombination rates and possible fabrica-tion errors. Firstly, the IQE of t...

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Bibliographic Details
Main Authors:	Yasemin Çiftci, Esra Eroğlu, Bilgehan Barış Öner, İrem Alp
Format:	Article
Language:	English
Published:	Sakarya University 2023-02-01
Series:	Sakarya Üniversitesi Fen Bilimleri Enstitüsü Dergisi
Subjects:	light emitting diodes (leds) uv-leds near uv devices solid state devices gan-based devices
Online Access:	https://dergipark.org.tr/tr/download/article-file/2167300
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