Quantum Efficiency Improvement of InGaN Near Ultraviolet LED Design by Genetic Algorithm
A near-ultraviolet (367-nm) InGaN light-emitting diode (LED) with 5.75 nm quantum well depth was designed and both internal/external quantum efficiency (IQE/EQE) values were optimized considering the effects of non-radiative recombination rates and possible fabrica-tion errors. Firstly, the IQE of t...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Sakarya University
2023-02-01
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| Series: | Sakarya Üniversitesi Fen Bilimleri Enstitüsü Dergisi |
| Subjects: | |
| Online Access: | https://dergipark.org.tr/tr/download/article-file/2167300 |
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