Simulation of Open Circuit Voltage Decay for Solar Cell Determination of the Base Minority Carrier Lifetime and the Back Surface Recombination Velocity

The Open Circuit Voltage Decay (OCVD) method for the determination of the base minority carrier lifetime (τ ) and the back surface recombination velocity (S) of silicon solar cells has been investigated at constant illumination level. The validity of the method has been discussed through a simulatio...

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Main Authors: B. Affour, P. Mialhe
Format: Article
Language:English
Published: Wiley 1997-01-01
Series:Active and Passive Electronic Components
Online Access:http://dx.doi.org/10.1155/1997/46342
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author B. Affour
P. Mialhe
author_facet B. Affour
P. Mialhe
author_sort B. Affour
collection DOAJ
description The Open Circuit Voltage Decay (OCVD) method for the determination of the base minority carrier lifetime (τ ) and the back surface recombination velocity (S) of silicon solar cells has been investigated at constant illumination level. The validity of the method has been discussed through a simulation study by considering the mathematical solution of the continuity equation. Extracted values of τ and S are compared to their input values in order to evaluate the performances of our method and the precision with regard to cell structural parameters, namely the base width and the base doping level. Deviations in lifetime values remain lower than 7% for almost all the cell configurations while recombination velocity deviations are shown to be dependent on cell structure parameters and experimental procedure.
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spelling doaj-art-075d315387e24fde825fdb5b292c4cfe2025-02-03T01:24:18ZengWileyActive and Passive Electronic Components0882-75161563-50311997-01-0119422523810.1155/1997/46342Simulation of Open Circuit Voltage Decay for Solar Cell Determination of the Base Minority Carrier Lifetime and the Back Surface Recombination VelocityB. Affour0P. Mialhe1Centre d'Etudes Fondamentales, Université de Perpignan, 52, Avenue de Villeneuve, Perpignan 66860, FranceCentre d'Etudes Fondamentales, Université de Perpignan, 52, Avenue de Villeneuve, Perpignan 66860, FranceThe Open Circuit Voltage Decay (OCVD) method for the determination of the base minority carrier lifetime (τ ) and the back surface recombination velocity (S) of silicon solar cells has been investigated at constant illumination level. The validity of the method has been discussed through a simulation study by considering the mathematical solution of the continuity equation. Extracted values of τ and S are compared to their input values in order to evaluate the performances of our method and the precision with regard to cell structural parameters, namely the base width and the base doping level. Deviations in lifetime values remain lower than 7% for almost all the cell configurations while recombination velocity deviations are shown to be dependent on cell structure parameters and experimental procedure.http://dx.doi.org/10.1155/1997/46342
spellingShingle B. Affour
P. Mialhe
Simulation of Open Circuit Voltage Decay for Solar Cell Determination of the Base Minority Carrier Lifetime and the Back Surface Recombination Velocity
Active and Passive Electronic Components
title Simulation of Open Circuit Voltage Decay for Solar Cell Determination of the Base Minority Carrier Lifetime and the Back Surface Recombination Velocity
title_full Simulation of Open Circuit Voltage Decay for Solar Cell Determination of the Base Minority Carrier Lifetime and the Back Surface Recombination Velocity
title_fullStr Simulation of Open Circuit Voltage Decay for Solar Cell Determination of the Base Minority Carrier Lifetime and the Back Surface Recombination Velocity
title_full_unstemmed Simulation of Open Circuit Voltage Decay for Solar Cell Determination of the Base Minority Carrier Lifetime and the Back Surface Recombination Velocity
title_short Simulation of Open Circuit Voltage Decay for Solar Cell Determination of the Base Minority Carrier Lifetime and the Back Surface Recombination Velocity
title_sort simulation of open circuit voltage decay for solar cell determination of the base minority carrier lifetime and the back surface recombination velocity
url http://dx.doi.org/10.1155/1997/46342
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