Synthesis of Indium Nitride Epitaxial Layers on a Substrate of Porous Indium Phosphide
The paper presents a technique to obtain InN films on porous InP substrates by radical-beam gettering epitaxy. According to the results of the Auger spectroscopy, InN film thickness ranged from 100 nm to 0.5 microns depending on the etching conditions.
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| Format: | Article |
| Language: | English |
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Sumy State University
2015-10-01
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| Series: | Журнал нано- та електронної фізики |
| Subjects: | |
| Online Access: | http://jnep.sumdu.edu.ua/download/numbers/2015/3/articles/jnep_2015_V7_03017.pdf |
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