Al‐Rich AlGaN Channel High Electron Mobility Transistors on Silicon: A Relevant Approach for High Temperature Stability of Electron Mobility

Al‐Rich AlGaN Channel High Electron Mobility Transistors on Silicon: A Relevant Approach for High Temperature Stability of Electron Mobility

Abstract Ultrawide bandgap (UWBG) semiconductors offer new possibilities to develop power electronics. High voltage operation for the off‐state as well as high temperature stability of the devices in on‐state are required. More than AlGaN/GaN heterostructures, AlGaN/AlGaN heterostructures are promis...

Full description

Saved in:
Bibliographic Details
Main Authors: Julien Bassaler, Jash Mehta, Idriss Abid, Leszek Konczewicz, Sandrine Juillaguet, Sylvie Contreras, Stéphanie Rennesson, Sebastian Tamariz, Maud Nemoz, Fabrice Semond, Julien Pernot, Farid Medjdoub, Yvon Cordier, Philippe Ferrandis
Format: Article
Language:English
Published: Wiley-VCH 2025-01-01
Series:Advanced Electronic Materials
Subjects:
AlGaN channel high electron mobility transistor
electron mobility
silicon substrate
temperature operation
ultrawide bandgap
Online Access:https://doi.org/10.1002/aelm.202400069
Tags: Add Tag
No Tags, Be the first to tag this record!

Internet

https://doi.org/10.1002/aelm.202400069

Similar Items