LACVD growth of diamond on gallium nitride substrates with PH3 in recipe

LACVD growth of diamond on gallium nitride substrates with PH3 in recipe

Integrating chemical vapour deposition (CVD) diamond with GaN material for effective thermal management of the power electronic devices is critical. However, there are issues with CVD processing, like GaN substrate etching under normal CVD diamond growth conditions, which nowadays, is overcome by in...

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Bibliographic Details
Main Authors: Awadesh Kumar Mallik, Kamatchi Jothiramalingam Sankaran, Derese Desta, Paulius Pobedinskas, Rani Mary Joy, Rozita Rouzbahani, Fernando Lloret, Hans-Gerd Boyen, Ken Haenen
Format: Article
Language:English
Published: Frontiers Media S.A. 2025-02-01
Series:Frontiers in Energy Research
Subjects:
diamond
GaN
chemical vapor deposition
phosphine
hydrogen
etching
Online Access:https://www.frontiersin.org/articles/10.3389/fenrg.2024.1413495/full
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https://www.frontiersin.org/articles/10.3389/fenrg.2024.1413495/full

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