Properties of κ‐Ga2O3 Prepared by Epitaxial Lateral Overgrowth
Abstract The structural and electrical properties of undoped and Sn doped κ‐Ga2O3 layers grown by epitaxial lateral overgrowth on TiO2/sapphire substrates using stripe and point masks show that the crystalline structure of the films can be greatly improved relative to conventional planar growth. The...
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| Format: | Article |
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Wiley-VCH
2025-01-01
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| Series: | Advanced Materials Interfaces |
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| Online Access: | https://doi.org/10.1002/admi.202300394 |
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| author | Alexander Polyakov In‐Hwan Lee Vladimir Nikolaev Aleksei Pechnikov Andrew Miakonkikh Mikhail Scheglov Eugene Yakimov Andrei Chikiryaka Anton Vasilev Anastasia Kochkova Ivan Shchemerov Alexey Chernykh Stephen Pearton |
| author_facet | Alexander Polyakov In‐Hwan Lee Vladimir Nikolaev Aleksei Pechnikov Andrew Miakonkikh Mikhail Scheglov Eugene Yakimov Andrei Chikiryaka Anton Vasilev Anastasia Kochkova Ivan Shchemerov Alexey Chernykh Stephen Pearton |
| author_sort | Alexander Polyakov |
| collection | DOAJ |
| description | Abstract The structural and electrical properties of undoped and Sn doped κ‐Ga2O3 layers grown by epitaxial lateral overgrowth on TiO2/sapphire substrates using stripe and point masks show that the crystalline structure of the films can be greatly improved relative to conventional planar growth. The undoped films are semi‐insulating, with the Fermi level pinned near EC‐0.7 eV, and deep electron traps at EC‐0.5 eV and EC‐0.3 eV are detectable in thermally stimulated current and photoinduced current transient spectra measurements. Low concentration Sn doping results in net donor concentrations of ≈ 1013 cm−3, and deep trap spectra determined by electron traps at EC‐0.5 eV, and deep acceptors with an optical ionization threshold near 2 and 3.1 eV. Treatment of the samples in hydrogen plasma at 330 °C increases the donor density near the surface to ≈ 1019 cm−3. Such samples show strong persistent photocapacitance and photoconductivity, indicating the possible DX‐like character of the centers involved. For thin (5 µm) κ‐Ga2O3 films grown on GaN/sapphire templates, p‐type‐like behavior is unexpectedly observed in electrical properties and we discuss the possible formation of a 2D hole gas at the κ‐Ga2O3/GaN interface. |
| format | Article |
| id | doaj-art-05ba1273ccee4b7594e0b23914b9a05a |
| institution | Kabale University |
| issn | 2196-7350 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Materials Interfaces |
| spelling | doaj-art-05ba1273ccee4b7594e0b23914b9a05a2025-01-20T13:56:18ZengWiley-VCHAdvanced Materials Interfaces2196-73502025-01-01122n/an/a10.1002/admi.202300394Properties of κ‐Ga2O3 Prepared by Epitaxial Lateral OvergrowthAlexander Polyakov0In‐Hwan Lee1Vladimir Nikolaev2Aleksei Pechnikov3Andrew Miakonkikh4Mikhail Scheglov5Eugene Yakimov6Andrei Chikiryaka7Anton Vasilev8Anastasia Kochkova9Ivan Shchemerov10Alexey Chernykh11Stephen Pearton12National University of Science and Technology MISiS, Moscow Leninsky pr. 4 Moscow 119049 RussiaDepartment of Materials Science and Engineering Korea University Anamro 145 Seoul 02841 Republic of KoreaNational University of Science and Technology MISiS, Moscow Leninsky pr. 4 Moscow 119049 RussiaNational University of Science and Technology MISiS, Moscow Leninsky pr. 4 Moscow 119049 RussiaValiev Institute of Physics and Technology Russian Academy of Sciences (Valiev IPT RAS) Nahimovsky Ave, 36(1) Moscow 117218 RussiaIoffe Institute 26 Politekhnicheskaya Saint Petersburg 194021 RussiaNational University of Science and Technology MISiS, Moscow Leninsky pr. 4 Moscow 119049 RussiaIoffe Institute 26 Politekhnicheskaya Saint Petersburg 194021 RussiaNational University of Science and Technology MISiS, Moscow Leninsky pr. 4 Moscow 119049 RussiaNational University of Science and Technology MISiS, Moscow Leninsky pr. 4 Moscow 119049 RussiaNational University of Science and Technology MISiS, Moscow Leninsky pr. 4 Moscow 119049 RussiaNational University of Science and Technology MISiS, Moscow Leninsky pr. 4 Moscow 119049 RussiaDepartment of Materials Science and Engineering University of Florida Gainesville FL 32611 USAAbstract The structural and electrical properties of undoped and Sn doped κ‐Ga2O3 layers grown by epitaxial lateral overgrowth on TiO2/sapphire substrates using stripe and point masks show that the crystalline structure of the films can be greatly improved relative to conventional planar growth. The undoped films are semi‐insulating, with the Fermi level pinned near EC‐0.7 eV, and deep electron traps at EC‐0.5 eV and EC‐0.3 eV are detectable in thermally stimulated current and photoinduced current transient spectra measurements. Low concentration Sn doping results in net donor concentrations of ≈ 1013 cm−3, and deep trap spectra determined by electron traps at EC‐0.5 eV, and deep acceptors with an optical ionization threshold near 2 and 3.1 eV. Treatment of the samples in hydrogen plasma at 330 °C increases the donor density near the surface to ≈ 1019 cm−3. Such samples show strong persistent photocapacitance and photoconductivity, indicating the possible DX‐like character of the centers involved. For thin (5 µm) κ‐Ga2O3 films grown on GaN/sapphire templates, p‐type‐like behavior is unexpectedly observed in electrical properties and we discuss the possible formation of a 2D hole gas at the κ‐Ga2O3/GaN interface.https://doi.org/10.1002/admi.202300394epitaxial lateral overgrowthGa2O3hydrogen plasma treatmentmetastable polymorphswide‐bandgap semiconductors |
| spellingShingle | Alexander Polyakov In‐Hwan Lee Vladimir Nikolaev Aleksei Pechnikov Andrew Miakonkikh Mikhail Scheglov Eugene Yakimov Andrei Chikiryaka Anton Vasilev Anastasia Kochkova Ivan Shchemerov Alexey Chernykh Stephen Pearton Properties of κ‐Ga2O3 Prepared by Epitaxial Lateral Overgrowth Advanced Materials Interfaces epitaxial lateral overgrowth Ga2O3 hydrogen plasma treatment metastable polymorphs wide‐bandgap semiconductors |
| title | Properties of κ‐Ga2O3 Prepared by Epitaxial Lateral Overgrowth |
| title_full | Properties of κ‐Ga2O3 Prepared by Epitaxial Lateral Overgrowth |
| title_fullStr | Properties of κ‐Ga2O3 Prepared by Epitaxial Lateral Overgrowth |
| title_full_unstemmed | Properties of κ‐Ga2O3 Prepared by Epitaxial Lateral Overgrowth |
| title_short | Properties of κ‐Ga2O3 Prepared by Epitaxial Lateral Overgrowth |
| title_sort | properties of κ ga2o3 prepared by epitaxial lateral overgrowth |
| topic | epitaxial lateral overgrowth Ga2O3 hydrogen plasma treatment metastable polymorphs wide‐bandgap semiconductors |
| url | https://doi.org/10.1002/admi.202300394 |
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